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HomeMaterials Science ForumMaterials Science Forum Vols. 255-257An Analytical Approach for Studying Diffusion and...

An Analytical Approach for Studying Diffusion and Drift Effects of Positrons at the Metal/Semi-Insulating GaAs Interface

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Periodical:

Materials Science Forum (Volumes 255-257)

Pages:

539-541

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.255-257.539

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Online since:

September 1997

Authors:

Y.F. Hu, S. Fung, C.D. Beling

Keywords:

Beam, Diffusion, Drift, GaAs, Metal/Semiconductor Contact, Positron, Semi-insulating (SI)

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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