Electroluminescence of III-Nitride Double Heterostructure Light Emitting Diodes with Silicon and Magnesium Doped InGaN

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Periodical:

Materials Science Forum (Volumes 258-263)

Edited by:

Gordon Davies and Maria Helena Nazaré

Pages:

1229-1234

DOI:

10.4028/www.scientific.net/MSF.258-263.1229

Citation:

A. W. Saxler et al., "Electroluminescence of III-Nitride Double Heterostructure Light Emitting Diodes with Silicon and Magnesium Doped InGaN", Materials Science Forum, Vols. 258-263, pp. 1229-1234, 1997

Online since:

December 1997

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