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HomeMaterials Science ForumMaterials Science Forum Vols. 258-263Electroluminescence of III-Nitride Double...

Electroluminescence of III-Nitride Double Heterostructure Light Emitting Diodes with Silicon and Magnesium Doped InGaN

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Defects in Semiconductors 19

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

1229-1234

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.1229

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Online since:

December 1997

Authors:

Adam W. Saxler, K.S. Kim, D. Walker, P. Kung, Xue Ren Zhang, G.J. Brown, W.C. Mitchel, M. Razeghi

Keywords:

Doping, Electroluminescence, InGaN, Light Emitting Diode (LED), Magnesium, Silicon

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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