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HomeMaterials Science ForumMaterials Science Forum Vols. 258-263Structural and Electrical Properties of Threading...

Structural and Electrical Properties of Threading Dislocations in GaN

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Defects in Semiconductors 19

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

1203-1210

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.1203

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Online since:

December 1997

Authors:

J. Elsner, R. Jones, P.K. Sitch, Thomas Frauenheim, M.I. Heggie, Sven Öberg, Patrick R. Briddon

Keywords:

Density Function Theory (DFT), Gallium Nitride (GaN), Threading Dislocation

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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