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HomeMaterials Science ForumMaterials Science Forum Vols. 258-263Defects Analysis in Strained InAlAs and InGaAs...

Defects Analysis in Strained InAlAs and InGaAs Films Grown on (111)B InP Substrates

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Defects in Semiconductors 19

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

1211-1216

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.1211

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Online since:

December 1997

Authors:

N. Bécourt, J.C. Ferrer, F. Peiró, A. Cornet, J.R. Morante, P. Gorostiza, G. Halkias, K. Michelakis, A. Georgakilas

Keywords:

Atomic Force Microscope (AFM), InAlAs, InGaAs, InP(111), Step Bunching, Strain, TEM

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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