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HomeMaterials Science ForumMaterials Science Forum Vols. 258-263Irradiation Induced Lattice Defects in...

Irradiation Induced Lattice Defects in In_0.53Ga_0.47As Pin Photodiodes

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Defects in Semiconductors 19

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

1217-1222

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.1217

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Online since:

December 1997

Authors:

T. Kudou, H. Ohyama, Jan Vanhellemont, Eddy Simoen, Cor Claeys, Y. Takami, Akihiro Fujii, H. Sunaga

Keywords:

Deep Level, In_0.53Ga_0.47As Epitaxial Layer, Pin Photodiodes, Radiation Damage

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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