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Study of Hole Traps in p-Type ZnSe and ZnSSe Epilayers by DLTS and Admittance Spectroscopy
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HomeMaterials Science ForumMaterials Science Forum Vols. 258-263Nanotubes and Pinholes in GaN and their Formation...

Nanotubes and Pinholes in GaN and their Formation Mechanism

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Defects in Semiconductors 19

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

1659-1664

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.1659

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Online since:

December 1997

Authors:

Zuzanna Liliental-Weber, Y. Chen, S. Ruvimov, J. Washburn

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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