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HomeMaterials Science ForumMaterials Science Forum Vols. 258-263Study of Hole Traps in p-Type ZnSe and ZnSSe...

Study of Hole Traps in p-Type ZnSe and ZnSSe Epilayers by DLTS and Admittance Spectroscopy

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Defects in Semiconductors 19

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

1671-1676

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.1671

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Online since:

December 1997

Authors:

I.S. Hauksson, D. Seghier, H.P. Gislason, K.A. Prior, B.C. Cavenett

Keywords:

Admittance, DLTS, II-VI, MBE, Nitrogen, p-Type, ZnSe, ZnSSe

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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