Paper Titles

Influence of Erbium Doping on Structure and Optical Properties of the InGaAs/GaAs Superlattices
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Defect Formation During Laser Induced Intermixing of GaAs/AlGaAs Multiple-Quantum-Well Structures
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Localized Epitaxy for Vertical Cavity Surface Emitting Laser Applications
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The Long Wavelength Luminescence Observation from the Self-Organized InGaAs Quantum Dots Grown on (100) GaAs Substrate by Metalorganic Chemical Vapor Deposition.
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Deep Hole Traps in Be-Doped Al_0.5Ga_0.5 As MBE Layers
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Nanotubes and Pinholes in GaN and their Formation Mechanism
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Defect-Related Recombination Processes in Low-Dimensional Structures of ZnCdSe/ZnSe, CdTe/CdMnTe and GaAs/AlGaAs
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Study of Hole Traps in p-Type ZnSe and ZnSSe Epilayers by DLTS and Admittance Spectroscopy
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Auger-Type Nonradiative Recombination Processes in Bulk and in Quantum Well Structures of II-VI Semiconductors Containing Transition Metal Ions
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HomeMaterials Science ForumMaterials Science Forum Vols. 258-263Deep Hole Traps in Be-Doped Al0.5Ga0.5 As MBE...

Deep Hole Traps in Be-Doped Al_0.5Ga_0.5 As MBE Layers

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Defects in Semiconductors 19

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

1653-1658

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.1653

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Online since:

December 1997

Authors:

J. Szatkowski, E. Placzek-Popko, K. Sierański, O.P. Hansen

Keywords:

AlGaAs, Defect, DLTS

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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