Coulomb Interaction between Carriers Localized in InAs/GaAs Quantum Dots and on Point Defects
p.1619
p.1619
Influence of Erbium Doping on Structure and Optical Properties of the InGaAs/GaAs Superlattices
p.1625
p.1625
Defect Formation During Laser Induced Intermixing of GaAs/AlGaAs Multiple-Quantum-Well Structures
p.1631
p.1631
Localized Epitaxy for Vertical Cavity Surface Emitting Laser Applications
p.1637
p.1637
The Long Wavelength Luminescence Observation from the Self-Organized InGaAs Quantum Dots Grown on (100) GaAs Substrate by Metalorganic Chemical Vapor Deposition.
p.1643
p.1643
Deep Hole Traps in Be-Doped Al0.5Ga0.5 As MBE Layers
p.1653
p.1653
Nanotubes and Pinholes in GaN and their Formation Mechanism
p.1659
p.1659
Defect-Related Recombination Processes in Low-Dimensional Structures of ZnCdSe/ZnSe, CdTe/CdMnTe and GaAs/AlGaAs
p.1665
p.1665
Study of Hole Traps in p-Type ZnSe and ZnSSe Epilayers by DLTS and Admittance Spectroscopy
p.1671
p.1671
The Long Wavelength Luminescence Observation from the Self-Organized InGaAs Quantum Dots Grown on (100) GaAs Substrate by Metalorganic Chemical Vapor Deposition.
Abstract:
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Periodical:
Materials Science Forum (Volumes 258-263)
Pages:
1643-1652
Citation:
Online since:
December 1997
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© 1997 Trans Tech Publications Ltd. All Rights Reserved
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