Paper Titles

Formation and Structure of Hydrogen Molecules in Crystalline Si
p.241

Structure and Charge-State-Dependent Instability of a Hydrogen-Carbon Complex in Silicon
p.247

The Trapping of Hydrogen at Carbon Defects in Silicon
p.253

The M-Line (760.8 me V) Luminescence System Associated with the Carbon-Hydrogen Acceptor Centre in Silicon
p.259

Interstitial Carbon-Hydrogen Defects in Silicon
p.265

Low-Temperature Migration of Hydrogen and Interaction with Oxygen
p.271

Anomalous Shift of the 1075 cm^-1 Oxygen-Hydrogen Defect in Silicon
p.277

Vibrational Absorption from Oxygen-Hydrogen (O_i-H₂) Complexes in Hydrogenated CZ Silicon
p.283

The I Centre: A Hydrogen Related Defect in Silicon
p.289

HomeMaterials Science ForumMaterials Science Forum Vols. 258-263Interstitial Carbon-Hydrogen Defects in Silicon

Interstitial Carbon-Hydrogen Defects in Silicon

Article Preview

Abstract:

You might also be interested in these eBooks

Defects in Semiconductors 19

Info:

Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

265-270

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.265

Citation:

Cite this paper

Online since:

December 1997

Authors:

P. Leary, Sven Öberg, Patrick R. Briddon, R. Jones

Keywords:

Ab Initio Theory, Carbon Interstitial, Hydrogen, Silicon

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1997 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: