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Paper Titles
Structure and Charge-State-Dependent Instability of a Hydrogen-Carbon Complex in Silicon
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The Trapping of Hydrogen at Carbon Defects in Silicon
p.253
The M-Line (760.8 me V) Luminescence System Associated with the Carbon-Hydrogen Acceptor Centre in Silicon
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Interstitial Carbon-Hydrogen Defects in Silicon
p.265
Low-Temperature Migration of Hydrogen and Interaction with Oxygen
p.271
Anomalous Shift of the 1075 cm-1 Oxygen-Hydrogen Defect in Silicon
p.277
Vibrational Absorption from Oxygen-Hydrogen (Oi-H2) Complexes in Hydrogenated CZ Silicon
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The I Centre: A Hydrogen Related Defect in Silicon
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Theory of Gold-Hydrogen Complexes in Silicon
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Low-Temperature Migration of Hydrogen and Interaction with Oxygen

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

271-276

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.271

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Online since:

December 1997

Authors:

K. Bonde Nielsen, Brian Bech Nielsen, J. Hansen

Keywords:

Diffusion, Hydrogen, Ion Implantation, Oxygen, Silicon

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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