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HomeMaterials Science ForumMaterials Science Forum Vols. 258-263Structure and Charge-State-Dependent Instability...

Structure and Charge-State-Dependent Instability of a Hydrogen-Carbon Complex in Silicon

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Defects in Semiconductors 19

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

247-252

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.247

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Online since:

December 1997

Authors:

Y. Kamiura, N. Ishiga, S. Ohyama, Y. Yamashita

Keywords:

Carbon, DLTS, Hydrogen, Silicon, Stress

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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