Paper Titles

Thermal Stability of Hydrogen Molecule in Crystalline Silicon
p.211

Emission and Capture Kinetics for a Hydrogen-Related Negative-U Center in Silicon: Evidence for Metastable Neutral Charge State
p.217

IR Studies of Si-H Bond-Bending Vibrational Modes in Si
p.223

Optical Absorption Due to Hydrogen Bound to Interstitial Si in Si Crystal Grown in Hydrogen Atmosphere
p.229

Trapping Site of Hydrogen Molecule in Crystalline Silicon
p.235

Formation and Structure of Hydrogen Molecules in Crystalline Si
p.241

Structure and Charge-State-Dependent Instability of a Hydrogen-Carbon Complex in Silicon
p.247

The Trapping of Hydrogen at Carbon Defects in Silicon
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The M-Line (760.8 me V) Luminescence System Associated with the Carbon-Hydrogen Acceptor Centre in Silicon
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HomeMaterials Science ForumMaterials Science Forum Vols. 258-263Trapping Site of Hydrogen Molecule in Crystalline...

Trapping Site of Hydrogen Molecule in Crystalline Silicon

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Defects in Semiconductors 19

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

235-240

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.235

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Online since:

December 1997

Authors:

K. Ishioka, K.G. Nakamura, M. Kitajima, N. Fukata, Kenji Murakami, S. Fujimura, Jun Kikuchi

Keywords:

Ab Initio Calculation, H₂, Microcrystalline and Amorphous Si, Raman Scattering

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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