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Thermal Stability of Hydrogen Molecule in Crystalline Silicon
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Emission and Capture Kinetics for a Hydrogen-Related Negative-U Center in Silicon: Evidence for Metastable Neutral Charge State
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IR Studies of Si-H Bond-Bending Vibrational Modes in Si
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Optical Absorption Due to Hydrogen Bound to Interstitial Si in Si Crystal Grown in Hydrogen Atmosphere
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Trapping Site of Hydrogen Molecule in Crystalline Silicon
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Formation and Structure of Hydrogen Molecules in Crystalline Si
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Structure and Charge-State-Dependent Instability of a Hydrogen-Carbon Complex in Silicon
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HomeMaterials Science ForumMaterials Science Forum Vols. 258-263IR Studies of Si-H Bond-Bending Vibrational Modes...

IR Studies of Si-H Bond-Bending Vibrational Modes in Si

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Defects in Semiconductors 19

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

223-228

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.223

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Online since:

December 1997

Authors:

S.Z. Tokmoldin, B.N. Mukashev

Keywords:

Atomic Hydrogen, Crystalline Silicon, IR Local Vibrational Modes

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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