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Thermal Stability of Hydrogen Molecule in Crystalline Silicon
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Emission and Capture Kinetics for a Hydrogen-Related Negative-U Center in Silicon: Evidence for Metastable Neutral Charge State
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IR Studies of Si-H Bond-Bending Vibrational Modes in Si
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Optical Absorption Due to Hydrogen Bound to Interstitial Si in Si Crystal Grown in Hydrogen Atmosphere
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HomeMaterials Science ForumMaterials Science Forum Vols. 258-263Emission and Capture Kinetics for a...

Emission and Capture Kinetics for a Hydrogen-Related Negative-U Center in Silicon: Evidence for Metastable Neutral Charge State

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Defects in Semiconductors 19

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

217-222

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.217

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Online since:

December 1997

Authors:

V.P. Markevich, L.I. Murin, Takashi Sekiguchi, Masashi Suezawa

Keywords:

Capture, Electronic Structure, Emission, Hydrogen-Related Center, Metastable State, Silicon

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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