Paper Titles

Optical Absorption Due to Hydrogen Bound to Interstitial Si in Si Crystal Grown in Hydrogen Atmosphere
p.229

Trapping Site of Hydrogen Molecule in Crystalline Silicon
p.235

Formation and Structure of Hydrogen Molecules in Crystalline Si
p.241

Structure and Charge-State-Dependent Instability of a Hydrogen-Carbon Complex in Silicon
p.247

The Trapping of Hydrogen at Carbon Defects in Silicon
p.253

The M-Line (760.8 me V) Luminescence System Associated with the Carbon-Hydrogen Acceptor Centre in Silicon
p.259

Interstitial Carbon-Hydrogen Defects in Silicon
p.265

Low-Temperature Migration of Hydrogen and Interaction with Oxygen
p.271

Anomalous Shift of the 1075 cm^-1 Oxygen-Hydrogen Defect in Silicon
p.277

HomeMaterials Science ForumMaterials Science Forum Vols. 258-263The Trapping of Hydrogen at Carbon Defects in...

The Trapping of Hydrogen at Carbon Defects in Silicon

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Defects in Semiconductors 19

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

253-258

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.253

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Online since:

December 1997

Authors:

Alison Mainwood

Keywords:

Carbon, Hydrogen, Local Vibrational Modes, Migration, Silicon

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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