Paper Titles

The Hydrogen-Saturated Self-Interstitial in Silicon and Germanium
p.35

Matrix-Induced Isotope Shift of a Vibrational Mode of Interstitial Oxygen in Germanium
p.41

Isotopic Shifts of the Rotational States of Interstitial Oxygen in Germanium
p.47

DLTS Combined with Perturbed Angular Correlation (PAC) on Radioactive ¹¹¹In Atoms in Ge
p.53

Microscopic Study of the Vacancy and Self-Interstitial in Germanium by PAC
p.59

Localization of Nondegenerate Electrons at Random Potential of Charged Impurities
p.65

Resonance Acceptor States and THz Generation in Uniaxially Strained p-Ge
p.71

Ionized Impurity Scattering in Isotopically Engineered, Compensated Ge:Ga,As
p.77

Defects in SiGe
p.83

HomeMaterials Science ForumMaterials Science Forum Vols. 258-263Microscopic Study of the Vacancy and...

Microscopic Study of the Vacancy and Self-Interstitial in Germanium by PAC

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Defects in Semiconductors 19

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

59-64

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.59

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Online since:

December 1997

Authors:

H. Hässlein, R. Sielemann, Ch. Zistl

Keywords:

Germanium, In-Impurities, Irradiation, PAC-Technique, Self-Interstitial, Vacancy

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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