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Resonance Acceptor States and THz Generation in Uniaxially Strained p-Ge
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Ionized Impurity Scattering in Isotopically Engineered, Compensated Ge:Ga,As
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HomeMaterials Science ForumMaterials Science Forum Vols. 258-263Resonance Acceptor States and THz Generation in...

Resonance Acceptor States and THz Generation in Uniaxially Strained p-Ge

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Defects in Semiconductors 19

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

71-76

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.71

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Online since:

December 1997

Authors:

I.V. Altukhov, E.G. Chirkova, M.S. Kagan, K.A. Korolev, V.P. Sinis, K. Schmalz, M.A. Odnoblyudov, I.N. Yassievich

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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