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HomeMaterials Science ForumMaterials Science Forum Vols. 258-263Acceptor States in Boron Doped SiGe Quantum Wells

Acceptor States in Boron Doped SiGe Quantum Wells

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Defects in Semiconductors 19

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

91-96

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.91

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Online since:

December 1997

Authors:

K. Schmalz, M.S. Kagan, I.V. Altukhov, K.A. Korolev, Dmitry Orlov, V.P. Sinis, S.G. Tomas, K.L. Wang, I.N. Yassievich

Keywords:

Acceptor States, SiGe Quantum Wells, Transport Property

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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