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Defects in SiGe
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Ge Content Dependence of the Infrared Spectrum of Interstitial Oxygen in Crystalline Si-Ge
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Optical Investigation of Ge-Rich Ge_1-xSi_x (0≤ x ≤ 0.1) Alloys
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Electrical Characterization of Electron Beam Induced Defects in Epitaxially Grown Si_1-xGe_x
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Lattice Defects in Si_1-xGe_x Epitaxial Diodes Induced by 20-MeV Alpha Rays
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Positron Annihilation Study of Electron-Irradiated Silicon-Germanium Bulk Alloys
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Electronic Properties of Defects Introduced in n- and p-Type Si_1-xGe_x During Ion Etching
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HomeMaterials Science ForumMaterials Science Forum Vols. 258-263Optical Investigation of Ge-Rich Ge1-xSix (0≤ x ≤...

Optical Investigation of Ge-Rich Ge_1-xSi_x (0≤ x ≤ 0.1) Alloys

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Defects in Semiconductors 19

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

109-114

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.109

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Online since:

December 1997

Authors:

M. Franz, Klaus Pressel, K.F. Dombrowski, H. Rücker, A. Barz, P. Dold, K.W. Benz

Keywords:

Absorption, Defect, Local Mode, Phonons, Photoluminescence (PL), RAMAN, Silicon-Germanium (SiGe)

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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