Paper Titles

Acceptor States in Boron Doped SiGe Quantum Wells
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Substitutional Carbon in Ge and Si_1-xGe_x.
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Ge Content Dependence of the Infrared Spectrum of Interstitial Oxygen in Crystalline Si-Ge
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Optical Investigation of Ge-Rich Ge_1-xSi_x (0≤ x ≤ 0.1) Alloys
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Electrical Characterization of Electron Beam Induced Defects in Epitaxially Grown Si_1-xGe_x
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Lattice Defects in Si_1-xGe_x Epitaxial Diodes Induced by 20-MeV Alpha Rays
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Positron Annihilation Study of Electron-Irradiated Silicon-Germanium Bulk Alloys
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Electronic Properties of Defects Introduced in n- and p-Type Si_1-xGe_x During Ion Etching
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The Role of Non-Radiative Defects in Thermal Quenching of Luminescence in SiGe/Si Structures Grown by Molecular Beam Epitaxy
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HomeMaterials Science ForumMaterials Science Forum Vols. 258-263Electrical Characterization of Electron Beam...

Electrical Characterization of Electron Beam Induced Defects in Epitaxially Grown Si_1-xGe_x

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Defects in Semiconductors 19

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

115-120

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.115

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Online since:

December 1997

Authors:

M. Mamor, F. Danie Auret, S.A. Goodman, G. Myburg, Prakash N.K. Deenapanray, W.E. Meyer

Keywords:

Barrier Height, Defect, DLTS, Electron Beam Metallization, Schottky Diode, Silicon-Germanium (SiGe)

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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