Lattice Defects in Si1-xGex Epitaxial Diodes Induced by 20-MeV Alpha Rays

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Periodical:

Materials Science Forum (Volumes 258-263)

Edited by:

Gordon Davies and Maria Helena Nazaré

Pages:

121-126

DOI:

10.4028/www.scientific.net/MSF.258-263.121

Citation:

H. Ohyama et al., "Lattice Defects in Si1-xGex Epitaxial Diodes Induced by 20-MeV Alpha Rays", Materials Science Forum, Vols. 258-263, pp. 121-126, 1997

Online since:

December 1997

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$35.00

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