Paper Titles

Substitutional Carbon in Ge and Si_1-xGe_x.
p.97

Ge Content Dependence of the Infrared Spectrum of Interstitial Oxygen in Crystalline Si-Ge
p.103

Optical Investigation of Ge-Rich Ge_1-xSi_x (0≤ x ≤ 0.1) Alloys
p.109

Electrical Characterization of Electron Beam Induced Defects in Epitaxially Grown Si_1-xGe_x
p.115

Lattice Defects in Si_1-xGe_x Epitaxial Diodes Induced by 20-MeV Alpha Rays
p.121

Positron Annihilation Study of Electron-Irradiated Silicon-Germanium Bulk Alloys
p.127

Electronic Properties of Defects Introduced in n- and p-Type Si_1-xGe_x During Ion Etching
p.133

The Role of Non-Radiative Defects in Thermal Quenching of Luminescence in SiGe/Si Structures Grown by Molecular Beam Epitaxy
p.139

Gold-Related Levels in Relaxed Si_1-xGe_x Alloy Layers: A Study of the Pinning Effect
p.145

HomeMaterials Science ForumMaterials Science Forum Vols. 258-263Lattice Defects in Si1-xGex Epitaxial Diodes...

Lattice Defects in Si_1-xGe_x Epitaxial Diodes Induced by 20-MeV Alpha Rays

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Defects in Semiconductors 19

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

121-126

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.121

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Online since:

December 1997

Authors:

H. Ohyama, Jan Vanhellemont, Eddy Simoen, Cor Claeys, Y. Takami, K. Hayama, H. Sunaga, Jef Poortmans, Matty Caymax

Keywords:

20-MeV Alpha Ray Irradiation, Deep Level, Radiation Damage, Si_1-xGe_x Epitaxial Layer

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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