Electronic Properties of Defects Introduced in n- and p-Type Si1-xGex During Ion Etching

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Periodical:

Materials Science Forum (Volumes 258-263)

Edited by:

Gordon Davies and Maria Helena Nazaré

Pages:

133-138

DOI:

10.4028/www.scientific.net/MSF.258-263.133

Citation:

S.A. Goodman et al., "Electronic Properties of Defects Introduced in n- and p-Type Si1-xGex During Ion Etching", Materials Science Forum, Vols. 258-263, pp. 133-138, 1997

Online since:

December 1997

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$35.00

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