Paper Titles

Optical Investigation of Ge-Rich Ge_1-xSi_x (0≤ x ≤ 0.1) Alloys
p.109

Electrical Characterization of Electron Beam Induced Defects in Epitaxially Grown Si_1-xGe_x
p.115

Lattice Defects in Si_1-xGe_x Epitaxial Diodes Induced by 20-MeV Alpha Rays
p.121

Positron Annihilation Study of Electron-Irradiated Silicon-Germanium Bulk Alloys
p.127

Electronic Properties of Defects Introduced in n- and p-Type Si_1-xGe_x During Ion Etching
p.133

The Role of Non-Radiative Defects in Thermal Quenching of Luminescence in SiGe/Si Structures Grown by Molecular Beam Epitaxy
p.139

Gold-Related Levels in Relaxed Si_1-xGe_x Alloy Layers: A Study of the Pinning Effect
p.145

Dislocation-Related Electronic States in Strain-Relaxed Si_1-xGe_x/Si Epitaxial Layers Grown at Low Temperature
p.151

Dislocation Activities in Bulk GeSi Crystals
p.159

HomeMaterials Science ForumMaterials Science Forum Vols. 258-263Electronic Properties of Defects Introduced in n-...

Electronic Properties of Defects Introduced in n- and p-Type Si_1-xGe_x During Ion Etching

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Defects in Semiconductors 19

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

133-138

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.133

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Online since:

December 1997

Authors:

S.A. Goodman, F. Danie Auret, M. Mamor, Prakash N.K. Deenapanray, W.E. Meyer

Keywords:

Defect, Ion Etching, Particle Irradiation, Silicon-Germanium (SiGe)

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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