Dislocation-Related Electronic States in Strain-Relaxed Si1-xGex/Si Epitaxial Layers Grown at Low Temperature

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Periodical:

Materials Science Forum (Volumes 258-263)

Edited by:

Gordon Davies and Maria Helena Nazaré

Pages:

151-158

DOI:

10.4028/www.scientific.net/MSF.258-263.151

Citation:

P. M. Mooney and K. Shum, "Dislocation-Related Electronic States in Strain-Relaxed Si1-xGex/Si Epitaxial Layers Grown at Low Temperature", Materials Science Forum, Vols. 258-263, pp. 151-158, 1997

Online since:

December 1997

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$35.00

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