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Paper Titles
Dislocation-Related Electronic States in Strain-Relaxed Si1-xGex/Si Epitaxial Layers Grown at Low Temperature
p.151
Dislocation Activities in Bulk GeSi Crystals
p.159
Schottky Diodes on Si1-x-yGexCy Alloys: Measurement of Band Off-Set by DLTS
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Molecular-Dynamics Simulations of Microscopic Defects in Silicon
p.171
Comparison of Muonium (Hydrogen) Dynamics in Germanium and Silicon
p.179
Hydrogenation and Passivation of B in Si by Boiling in Water Pressurized up to 10 ATM
p.185
Low Temperature Hydrogen Diffusion in Silicon: Influence of Substrate Quality and the Surface Damage
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Mechanism of Ultrasonic Enhanced Hydrogenation in Poly-Si Thin Films
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Hydrogen Molecules in Crystalline Silicon
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Comparison of Muonium (Hydrogen) Dynamics in Germanium and Silicon

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

179-184

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.179

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Online since:

December 1997

Authors:

R.L. Lichti, K.H. Chow, S.F.J. Cox, T.L. Estle, B. Hitti, C. Schwab

Keywords:

Diffusion, Dynamic, Germanium, Hydrogen, Muonium, Silicon

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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