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HomeMaterials Science ForumMaterials Science Forum Vols. 258-263Schottky Diodes on Si1-x-yGexCy Alloys:...

Schottky Diodes on Si_1-x-yGe_xC_y Alloys: Measurement of Band Off-Set by DLTS

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Defects in Semiconductors 19

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

165-170

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.165

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Online since:

December 1997

Authors:

M. Serpentini, G. Brémond

Keywords:

Band-Offset, DLTS, Schottky Contact, Si_1-x-yGe_xC_y, Strain, Tungstene

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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