Paper Titles

Lattice Defects in Si_1-xGe_x Epitaxial Diodes Induced by 20-MeV Alpha Rays
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Positron Annihilation Study of Electron-Irradiated Silicon-Germanium Bulk Alloys
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Electronic Properties of Defects Introduced in n- and p-Type Si_1-xGe_x During Ion Etching
p.133

The Role of Non-Radiative Defects in Thermal Quenching of Luminescence in SiGe/Si Structures Grown by Molecular Beam Epitaxy
p.139

Gold-Related Levels in Relaxed Si_1-xGe_x Alloy Layers: A Study of the Pinning Effect
p.145

Dislocation-Related Electronic States in Strain-Relaxed Si_1-xGe_x/Si Epitaxial Layers Grown at Low Temperature
p.151

Dislocation Activities in Bulk GeSi Crystals
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Schottky Diodes on Si_1-x-yGe_xC_y Alloys: Measurement of Band Off-Set by DLTS
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Molecular-Dynamics Simulations of Microscopic Defects in Silicon
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HomeMaterials Science ForumMaterials Science Forum Vols. 258-263Gold-Related Levels in Relaxed Si1-xGex Alloy...

Gold-Related Levels in Relaxed Si_1-xGe_x Alloy Layers: A Study of the Pinning Effect

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Defects in Semiconductors 19

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

145-150

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.145

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Online since:

December 1997

Authors:

A. Mesli, P. Kringhøj, Arne Nylandsted Larsen

Keywords:

Deep Level, DLTS, SiGe Alloys, Silicon, Transition Metal

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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