Paper Titles

Electronic Properties of Defects Introduced in n- and p-Type Si_1-xGe_x During Ion Etching
p.133

The Role of Non-Radiative Defects in Thermal Quenching of Luminescence in SiGe/Si Structures Grown by Molecular Beam Epitaxy
p.139

Gold-Related Levels in Relaxed Si_1-xGe_x Alloy Layers: A Study of the Pinning Effect
p.145

Dislocation-Related Electronic States in Strain-Relaxed Si_1-xGe_x/Si Epitaxial Layers Grown at Low Temperature
p.151

Dislocation Activities in Bulk GeSi Crystals
p.159

Schottky Diodes on Si_1-x-yGe_xC_y Alloys: Measurement of Band Off-Set by DLTS
p.165

Molecular-Dynamics Simulations of Microscopic Defects in Silicon
p.171

Comparison of Muonium (Hydrogen) Dynamics in Germanium and Silicon
p.179

Hydrogenation and Passivation of B in Si by Boiling in Water Pressurized up to 10 ATM
p.185

HomeMaterials Science ForumMaterials Science Forum Vols. 258-263Dislocation Activities in Bulk GeSi Crystals

Dislocation Activities in Bulk GeSi Crystals

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Defects in Semiconductors 19

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

159-164

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.159

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Online since:

December 1997

Authors:

Ichiro Yonenaga, Koji Sumino

Keywords:

Alloy Hardening, Crystal Growth, Dislocation, Dislocation Velocity, GeSi

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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