The Role of Non-Radiative Defects in Thermal Quenching of Luminescence in SiGe/Si Structures Grown by Molecular Beam Epitaxy

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Periodical:

Materials Science Forum (Volumes 258-263)

Edited by:

Gordon Davies and Maria Helena Nazaré

Pages:

139-144

Citation:

I.A. Buyanova et al., "The Role of Non-Radiative Defects in Thermal Quenching of Luminescence in SiGe/Si Structures Grown by Molecular Beam Epitaxy", Materials Science Forum, Vols. 258-263, pp. 139-144, 1997

Online since:

December 1997

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$38.00

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