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HomeMaterials Science ForumMaterials Science Forum Vols. 258-263Substitutional Carbon in Ge and Si1-xGex.

Substitutional Carbon in Ge and Si_1-xGe_x.

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Defects in Semiconductors 19

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

97-102

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.97

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Online since:

December 1997

Authors:

L. Hoffmann, J.C. Bach, J. Lundsgaard Hansen, Arne Nylandsted Larsen, Brian Bech Nielsen, P. Leary, R. Jones, Sven Öberg

Keywords:

Ab Initio Calculation, Carbon, Ge, Ion-Channeling, IR-Spectroscopy, Si_1-xGe_x

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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