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HomeMaterials Science ForumMaterials Science Forum Vols. 258-263Ionized Impurity Scattering in Isotopically...

Ionized Impurity Scattering in Isotopically Engineered, Compensated Ge:Ga,As

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Defects in Semiconductors 19

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

77-82

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.77

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Online since:

December 1997

Authors:

K.M. Itoh, Takahiro Kinoshita, W. Walukiewicz, J.W. Beeman, Eugene E. Haller, J. Muto, J.W. Farmer, V.I. Ozhogin

Keywords:

Compensated Semiconductors, Ionized Impurity Scattering, Mobility

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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