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Ionized Impurity Scattering in Isotopically Engineered, Compensated Ge:Ga,As
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Defects in SiGe
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Acceptor States in Boron Doped SiGe Quantum Wells
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Substitutional Carbon in Ge and Si_1-xGe_x.
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Ge Content Dependence of the Infrared Spectrum of Interstitial Oxygen in Crystalline Si-Ge
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Optical Investigation of Ge-Rich Ge_1-xSi_x (0≤ x ≤ 0.1) Alloys
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HomeMaterials Science ForumMaterials Science Forum Vols. 258-263Defects in SiGe

Defects in SiGe

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Defects in Semiconductors 19

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

83-90

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.83

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Online since:

December 1997

Authors:

Arne Nylandsted-Larsen

Keywords:

Defect, Diffusion, e-Centre, Molecular Beam Epitaxy, Silicon-Germanium (SiGe)

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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