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HomeMaterials Science ForumMaterials Science Forum Vols. 258-263Transient Lattice Vibration Induced by Successive...

Transient Lattice Vibration Induced by Successive Carrier Captures at a Deep-Level Defect and the Effect on Defect Reactions

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Defects in Semiconductors 19

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

659-664

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.659

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Online since:

December 1997

Authors:

Yuzo Shinozuka, Tetsuya Karatsu

Keywords:

Deep Level, Defect Reactions, Lattice Relaxation, Multiphonon Recombination

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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