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HomeMaterials Science ForumMaterials Science Forum Vols. 258-263A Deep Photoluminescence Band in 4H SiC Related to...

A Deep Photoluminescence Band in 4H SiC Related to the Silicon Vacancy

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Defects in Semiconductors 19

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

685-690

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.685

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Online since:

December 1997

Authors:

E. Sörman, Nguyen Tien Son, W.M. Chen, Christer Hallin, J. Lennart Lindström, Erik Janzén

Keywords:

Electron Irradiation, ODMR, Silicon Carbide (SiC), Vacancy

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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