A Deep Photoluminescence Band in 4H SiC Related to the Silicon Vacancy

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Periodical:

Materials Science Forum (Volumes 258-263)

Edited by:

Gordon Davies and Maria Helena Nazaré

Pages:

685-690

DOI:

10.4028/www.scientific.net/MSF.258-263.685

Citation:

E. Sörman et al., "A Deep Photoluminescence Band in 4H SiC Related to the Silicon Vacancy", Materials Science Forum, Vols. 258-263, pp. 685-690, 1997

Online since:

December 1997

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$35.00

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