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HomeMaterials Science ForumMaterials Science Forum Vols. 258-263Thermal Activation Energies for the Three...

Thermal Activation Energies for the Three Inequivalent Lattice Sites for the B_Si Acceptor in 6H-SiC

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Defects in Semiconductors 19

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

691-696

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.691

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Online since:

December 1997

Authors:

A.O. Evwaraye, S.R. Smith, W.C. Mitchel, H. McD. Hobgood, G. Augustine, Vijay Balakrishna

Keywords:

Admittance Spectroscopy, Boron, Silicon Carbide (SiC)

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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