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HomeMaterials Science ForumMaterials Science Forum Vols. 258-263Electrical Properties of Low Temperature Grown...

Electrical Properties of Low Temperature Grown GaAs

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Defects in Semiconductors 19

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

929-932

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.929

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Online since:

December 1997

Authors:

M. Stellmacher, J. Nagle, K. Khirouni, J.C. Bourgoin

Keywords:

Admittance Spectroscopy, EL2, GaAs, Percolation, Precipitation, TLG

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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