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HomeMaterials Science ForumMaterials Science Forum Vols. 258-263Traps Found in GaAs MESFETs: Properties Location...

Traps Found in GaAs MESFETs: Properties Location and Detection

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Defects in Semiconductors 19

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

933-938

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.933

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Online since:

December 1997

Authors:

B.K. Jones, M.A. Iqbal

Keywords:

Dispersion, DLTS, GaAs MESFET's, Noise, Semi-Insulating Substrate, Trap

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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