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HomeMaterials Science ForumMaterials Science Forum Vols. 258-263Influence of Dopant Species on Electron Mobility...

Influence of Dopant Species on Electron Mobility in Heavily Doped Semiconductors

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Defects in Semiconductors 19

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

939-944

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.939

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Online since:

December 1997

Authors:

G. Kaiblinger-Grujin, H. Kosina, Ch. Köpf, Siegfried Selberherr

Keywords:

Electron Mobility, Ionized Impurity Scattering, Thomas-Fermi Atomic Model

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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