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Defect Control in As-Rich GaAs
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Electrically Detected Magnetic Resonance at Different Microwave Frequencies
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HomeMaterials Science ForumMaterials Science Forum Vols. 258-263As Antisite-Related Defects Detected by...

As Antisite-Related Defects Detected by Spin-Dependent Recombination in Delta-Doped (Si) GaAs Grown by MBE at Low Temperature

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Defects in Semiconductors 19

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

957-962

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.957

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Online since:

December 1997

Authors:

K. Krambrock, M.V.B. Pinheiro, S.M. Medeiros

Keywords:

Antisite, EDMR, GaAs, Intrinsic Defect, MBE, SDR

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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