As Antisite-Related Defects Detected by Spin-Dependent Recombination in Delta-Doped (Si) GaAs Grown by MBE at Low Temperature

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Periodical:

Materials Science Forum (Volumes 258-263)

Edited by:

Gordon Davies and Maria Helena Nazaré

Pages:

957-962

DOI:

10.4028/www.scientific.net/MSF.258-263.957

Citation:

K. Krambrock et al., "As Antisite-Related Defects Detected by Spin-Dependent Recombination in Delta-Doped (Si) GaAs Grown by MBE at Low Temperature", Materials Science Forum, Vols. 258-263, pp. 957-962, 1997

Online since:

December 1997

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