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HomeMaterials Science ForumMaterials Science Forum Vols. 258-263

Materials Science Forum Vols. 258-263

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263

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Table of Contents

Paper Title Page

Ab Initio Study of the C_As Local Oscillator in Gallium Arsenide

Authors: K. Petzke, C. Göbel, Christoph Schrepel, Udo Scherz

861

Spectroscopy of Nitrogen-Related Centers in Gallium Arsenide

Authors: H.C. Alt, B. Wiedemann, Klaus Bethge

867

Atomic Configuration of Oxygen Negative-U Center in GaAs

Authors: Akihito Taguchi, Hiroyuki Kageshima

873

Ga Vacancies as Compensating Centers in Homogeneously or δ-Doped GaAs(Si) Layers

Authors: T. Laine, Kimmo Saarinen, Pekka J. Hautojärvi, C. Corbel

879

Positron Annihilation and Scanning Tunneling Microscopy Used to Characterise Defects in Highly Si-Doped GaAs

Authors: J. Gebauer, Reinhard Krause-Rehberg, C. Domke, Ph. Ebert, K. Urban

885

Chemical Trends in Electronic Properties of Arsenic Vacancy-3d Transition Metal Pairs in Gallium Arsenide

Authors: Ecio J. França, Lucy V.C. Assali

893

Perturbed Angular Correlation Measurements and Lattice Site Location of Br in GaAs

Authors: M. Wehner, M. Risse, R. Vianden, Michael Dalmer, H. Hofsäss, M.C. Ridgway, M. Petravic, the ISOLDE Collaboration the ISOLDE Collaboration

899

Equilibrium Vacancies in Te-Doped GaAs Studied by Positron Annihilation

Authors: J. Gebauer, Reinhard Krause-Rehberg, M. Lausmann, G. Lippold

905

Spectroscopic Investigation of Neutral Niobium in GaAs

Authors: D. Ammerlahn, B. Clerjaud, D. Côte, L. Köhne, M. Krause, Dieter Bimberg

911

Yb Luminescence Centres in MBE-Grown and Ion-Implanted GaAs

Authors: A.A. Gippius, V.M. Konnov, N.N. Loyko, V.V. Ushakov, T.V. Larikova, I.P. Kazakov, V.A. Dravin, N.A. Sobolev

917