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HomeMaterials Science ForumMaterials Science Forum Vols. 258-263

Materials Science Forum Vols. 258-263

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263

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Table of Contents

Paper Title Page

Arsenic Interstitial Pairs in GaAs

Authors: P. Papoulias, C.G. Morgan, J.T. Schick, J.I. Landman, N. Rahhal-Orabi

923

Electrical Properties of Low Temperature Grown GaAs

Authors: M. Stellmacher, J. Nagle, K. Khirouni, J.C. Bourgoin

929

Traps Found in GaAs MESFETs: Properties Location and Detection

Authors: B.K. Jones, M.A. Iqbal

933

Influence of Dopant Species on Electron Mobility in Heavily Doped Semiconductors

Authors: G. Kaiblinger-Grujin, H. Kosina, Ch. Köpf, Siegfried Selberherr

939

Creation of Ga_As Antisites in GaAs by Transmutation of Radioactive ⁷¹As_As to Stable ⁷¹Ga_As

Authors: R. Magerle, A. Burchard, Doris Forkel-Wirth, Manfred Deicher, the ISOLDE Collaboration the ISOLDE Collaboration

945

Defect Control in As-Rich GaAs

Authors: P. Specht, S. Jeong, Hoon Sohn, M. Luysberg, A. Prasad, J. Gebauer, Reinhard Krause-Rehberg, Eicke R. Weber

951

As Antisite-Related Defects Detected by Spin-Dependent Recombination in Delta-Doped (Si) GaAs Grown by MBE at Low Temperature

Authors: K. Krambrock, M.V.B. Pinheiro, S.M. Medeiros

957

Electrically Detected Magnetic Resonance at Different Microwave Frequencies

Authors: M.S. Brandt, M.W. Bayerl, N.M. Reinacher, T. Wimbauer, M. Stutzmann

963

Metastable Antisite Pair in GaAs

Authors: S. Pöykkö, M.J. Puska, Risto M. Nieminen

969

Theoretical Study of Antistructure Defects in GaAs

Authors: A. Janotti, A. Fazzio, P. Piquini, R. Mota

975