Materials Science Forum Vols. 258-263

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https://doi.org/10.4028/www.scientific.net/MSF.258-263

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Paper Title Page

Implantation Doping and Hydrogen Passivation of GaN

Authors: A. Burchard, Manfred Deicher, Doris Forkel-Wirth, Eugene E. Haller, R. Magerle, A. Prospero, A. Stötzler, the ISOLDE Collaboration the ISOLDE Collaboration

1099

Electrically and Optically Detected Magnetic Resonance in GaN-Based LEDs

Authors: W.E. Carlos

1105

Donor-Acceptor Pair Transitions in GaN

Authors: K. Kornitzer, M. Mayer, M. Mundbrod, Klaus Thonke, A. Pelzmann, Michael Kersting, R. Sauer

1113

AB Initio Studies of Atomic-Scale Defects in GaN and AlN

Authors: T. Mattila, Risto M. Nieminen

1119

Photoluminescence Dynamics in the Near Bandgap Region of Homoepitaxial GaN Layers

Authors: K. Korona, Peder Bergman, Bo Monemar, Jacek M. Baranowski, K. Pakula, I. Grzegory, Sylwester Porowski

1125

Zeeman Study of the 0.9 eV Emission in AlN and GaN

Authors: P. Thurian, I. Loa, P. Maxim, Klaus Pressel, Andreas Hoffmann, C. Thomsen

1131

A First-Principles Study of Mg-Related Defects in GaN

Authors: K.J. Chang, Sun Ghil Lee

1137

Impact of Radiation-Induced Defects on the Yellow Luminescence Band in MOCVD GaN

Authors: Valentin V. Emtsev, V.Yu. Davydov, I.N. Goncharuk, Evgenia V. Kalinina, Vitalii V. Kozlovski, D.S. Poloskin, A.V. Sakharov, N.M. Shmidt, A.N. Smirnov, A.S. Usikov

1143

On the Origin of the Yellow Donor-Acceptor Pair Emission in GaN

Authors: Marek Godlewski, V.Yu. Ivanov, A. Kamińska, H.Y. Zuo, E.M. Goldys, T.L. Tansley, A. Barski, U. Rossner, J.L. Rouvicre, M. Arlery, I. Grzegory, T. Suski, Sylwester Porowski, Peder Bergman, Bo Monemar

1149

Blue Emission in Mg Doped GaN Studied by Time Resolved Spectroscopy

Authors: R. Seitz, C. Gaspar, Teresa Monteiro, Eduarda Pereira, Mathieu Leroux, B. Beaumont, Pierre Gibart

1155