Paper Titles

AB Initio Studies of Atomic-Scale Defects in GaN and AlN
p.1119

Photoluminescence Dynamics in the Near Bandgap Region of Homoepitaxial GaN Layers
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Zeeman Study of the 0.9 eV Emission in AlN and GaN
p.1131

A First-Principles Study of Mg-Related Defects in GaN
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Impact of Radiation-Induced Defects on the Yellow Luminescence Band in MOCVD GaN
p.1143

On the Origin of the Yellow Donor-Acceptor Pair Emission in GaN
p.1149

Blue Emission in Mg Doped GaN Studied by Time Resolved Spectroscopy
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GaN Doped with Sulfur
p.1161

Identification of Iron Transition Group Trace Impurities in GaN Bulk Crystals by Electron Paramagnetic Resonance
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HomeMaterials Science ForumMaterials Science Forum Vols. 258-263Impact of Radiation-Induced Defects on the Yellow...

Impact of Radiation-Induced Defects on the Yellow Luminescence Band in MOCVD GaN

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Defects in Semiconductors 19

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

1143-1148

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.1143

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Online since:

December 1997

Authors:

Valentin V. Emtsev, V.Yu. Davydov, I.N. Goncharuk, Evgenia V. Kalinina, Vitalii V. Kozlovski, D.S. Poloskin, A.V. Sakharov, N.M. Shmidt, A.N. Smirnov, A.S. Usikov

Keywords:

Gallium Nitride (GaN), Irradiation, Luminescence, Native Defects

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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