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Electrically and Optically Detected Magnetic Resonance in GaN-Based LEDs
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Donor-Acceptor Pair Transitions in GaN
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AB Initio Studies of Atomic-Scale Defects in GaN and AlN
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Photoluminescence Dynamics in the Near Bandgap Region of Homoepitaxial GaN Layers
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Zeeman Study of the 0.9 eV Emission in AlN and GaN
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A First-Principles Study of Mg-Related Defects in GaN
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Impact of Radiation-Induced Defects on the Yellow Luminescence Band in MOCVD GaN
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On the Origin of the Yellow Donor-Acceptor Pair Emission in GaN
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Blue Emission in Mg Doped GaN Studied by Time Resolved Spectroscopy
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HomeMaterials Science ForumMaterials Science Forum Vols. 258-263Zeeman Study of the 0.9 eV Emission in AlN and GaN

Zeeman Study of the 0.9 eV Emission in AlN and GaN

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Defects in Semiconductors 19

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

1131-1136

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.1131

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Online since:

December 1997

Authors:

P. Thurian, I. Loa, P. Maxim, Klaus Pressel, Andreas Hoffmann, C. Thomsen

Keywords:

Aluminum Nitride (AlN), Gallium Nitride (GaN), Photoluminescence (PL), Transition Metal, V³⁺, Zeeman Effect

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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