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On the Origin of the Yellow Donor-Acceptor Pair Emission in GaN
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Blue Emission in Mg Doped GaN Studied by Time Resolved Spectroscopy
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HomeMaterials Science ForumMaterials Science Forum Vols. 258-263On the Origin of the Yellow Donor-Acceptor Pair...

On the Origin of the Yellow Donor-Acceptor Pair Emission in GaN

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Defects in Semiconductors 19

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

1149-1154

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.1149

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Online since:

December 1997

Authors:

Marek Godlewski, V.Yu. Ivanov, A. Kamińska, H.Y. Zuo, E.M. Goldys, T.L. Tansley, A. Barski, U. Rossner, J.L. Rouvicre, M. Arlery, I. Grzegory, T. Suski, Sylwester Porowski, Peder Bergman, Bo Monemar

Keywords:

Donor-Acceptor Pair Recombination, Gallium Nitride (GaN), Photoluminescence (PL)

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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