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A First-Principles Study of Mg-Related Defects in GaN
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Impact of Radiation-Induced Defects on the Yellow Luminescence Band in MOCVD GaN
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On the Origin of the Yellow Donor-Acceptor Pair Emission in GaN
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Blue Emission in Mg Doped GaN Studied by Time Resolved Spectroscopy
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GaN Doped with Sulfur
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Identification of Iron Transition Group Trace Impurities in GaN Bulk Crystals by Electron Paramagnetic Resonance
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Local Vibrational Modes at Transition-Metal Impurities in Hexagonal AlN and GaN Crystals
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Local Vibrational Modes at As_N in Cubic GaN: Comparing Ab-Initio Calculations to a Semi-Empirical Model
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A Codoping Method in GaN Proposed by Ab Initio Electronic-Structure Calculations
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HomeMaterials Science ForumMaterials Science Forum Vols. 258-263GaN Doped with Sulfur

GaN Doped with Sulfur

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Defects in Semiconductors 19

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

1161-1166

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.1161

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Online since:

December 1997

Authors:

Adam W. Saxler, P. Kung, Xue Ren Zhang, D. Walker, J. Solomon, M. Ahoujja, W.C. Mitchel, H.R. Vydyanath, M. Razeghi

Keywords:

Doping, Gallium Nitride (GaN), Sulfur

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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