Paper Titles

Donor-Acceptor Pair Transitions in GaN
p.1113

AB Initio Studies of Atomic-Scale Defects in GaN and AlN
p.1119

Photoluminescence Dynamics in the Near Bandgap Region of Homoepitaxial GaN Layers
p.1125

Zeeman Study of the 0.9 eV Emission in AlN and GaN
p.1131

A First-Principles Study of Mg-Related Defects in GaN
p.1137

Impact of Radiation-Induced Defects on the Yellow Luminescence Band in MOCVD GaN
p.1143

On the Origin of the Yellow Donor-Acceptor Pair Emission in GaN
p.1149

Blue Emission in Mg Doped GaN Studied by Time Resolved Spectroscopy
p.1155

GaN Doped with Sulfur
p.1161

HomeMaterials Science ForumMaterials Science Forum Vols. 258-263A First-Principles Study of Mg-Related Defects in...

A First-Principles Study of Mg-Related Defects in GaN

Article Preview

Abstract:

You might also be interested in these eBooks

Defects in Semiconductors 19

Info:

Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

1137-1142

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.1137

Citation:

Cite this paper

Online since:

December 1997

Authors:

K.J. Chang, Sun Ghil Lee

Keywords:

Deep Level Defect, Gallium Nitride (GaN), Photoluminescence (PL)

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1997 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: