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HomeMaterials Science ForumMaterials Science Forum Vols. 258-263AB Initio Studies of Atomic-Scale Defects in GaN...

AB Initio Studies of Atomic-Scale Defects in GaN and AlN

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Defects in Semiconductors 19

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

1119-1124

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.1119

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Online since:

December 1997

Authors:

T. Mattila, Risto M. Nieminen

Keywords:

Aluminum Nitride (AlN), Broadband Luminescence, Cation Vacancy, Donor Impurities, Gallium Nitride (GaN)

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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