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HomeMaterials Science ForumMaterials Science Forum Vols. 258-263Electrical and Optical Characterization of Defects...

Electrical and Optical Characterization of Defects in GaN Generated by Ion Implantation

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Defects in Semiconductors 19

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

1093-1098

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.1093

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Online since:

December 1997

Authors:

D. Haase, M. Burkard, M. Schmid, Achim Dörnen, H. Schweizer, H. Bolay, F. Scholz

Keywords:

DLTS, Gallium Nitride (GaN), Implantation, PL

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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