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HomeMaterials Science ForumMaterials Science Forum Vols. 258-263GaN Grown Using Trimethylgallium and...

GaN Grown Using Trimethylgallium and Triethylgallium

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Defects in Semiconductors 19

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

1081-1086

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.1081

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Online since:

December 1997

Authors:

Adam W. Saxler, P. Kung, Xue Ren Zhang, D. Walker, J. Solomon, W.C. Mitchel, M. Razeghi

Keywords:

Gallium Nitride (GaN), MOCVD, Triethylgallium, Trimethylgallium

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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