GaN Grown Using Trimethylgallium and Triethylgallium

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Periodical:

Materials Science Forum (Volumes 258-263)

Edited by:

Gordon Davies and Maria Helena Nazaré

Pages:

1081-1086

DOI:

10.4028/www.scientific.net/MSF.258-263.1081

Citation:

A. W. Saxler et al., "GaN Grown Using Trimethylgallium and Triethylgallium", Materials Science Forum, Vols. 258-263, pp. 1081-1086, 1997

Online since:

December 1997

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$35.00

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